Trench-type semiconductor power devices
US8890280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2011 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/159
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor substrate. The semiconductor drift region comprises a semiconductor region of a first conduction type and a semiconductor region of a second conduction type. The semiconductor region of the first conduction type and the semiconductor region of the second conduction type form a superjunction structure. A high-K dielectric is on the semiconductor substrate. The high-K dielectric is adjacent to the semiconductor region of the second conduction type. An active region is on the semiconductor drift region. A trench gate structure is on the high-K dielectric, the trench gate structure being adjacent to the active region. The semiconductor region of the second conduction type is formed by shallow angle ion implantation, thus its width is narrow and its concentration is high.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.