Integrated electrostatic discharge (ESD) device
US8891213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2011 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Apr 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/603
Abstract
A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well region is characterized by a first depth. The device includes an MOS transistor, a first bipolar transistor, and a second bipolar transistor. The MOS transistor includes a first lightly doped drain (LDD) region of a second depth within the well region, and a drain region and an emitter region within in the first LDD region. The emitter region is characterized by a second conductivity type. The first bipolar transistor is associated with the emitter region, the first LDD region, and the well region, and is characterized by a first trigger voltage. The second bipolar transistor is associated with the first LDD region, the well region, and the substrate, and is characterized by a second trigger voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.