Pseudo-NOR cell for ternary content addressable memory
US8891273B2 · kind B2 · utility
1Cited by
17References
15Claims
0Family size
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Key dates
| Filing date | Dec 26, 2012 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Feb 7, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.