Nonvolatile memory device, memory system having the same and block managing method, and program and erase methods thereof
US8891300B2 · kind B2 · utility
14Cited by
8References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2013 |
| Grant date | Nov 18, 2014 |
| Priority date | — |
| Expiry date | Apr 25, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5646
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the method includes overwriting a memory cell storing m-bit data to store n-bit data, where n is less than or equal to m. The memory cell has one of a first plurality of program states when storing the m-bit data, and the memory cell has one of a second plurality of program states when storing the n-bit data. The second plurality of program states include at least one program state not in the first plurality of program states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.