High polarization energy storage materials using oriented single crystals
US8894765B1 · kind B1 · utility
1Cited by
5References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 12, 2010 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A PIN-PMN-PT ferroelectric single crystal and a method of manufacture are disclosed. The PIN-PMN-PT ferroelectric single crystal is oriented and polarized along a single crystallographic direction. The PIN-PMN-PT ferroelectric single crystal ferroelectric has increased remnant polarization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.