Compound semiconductor precursor ink composition, method for forming a chalcogenide semiconductor film, and method for forming a photovoltaic device
US8894889B1 · kind B1 · utility
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13Claims
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Key dates
| Filing date | May 9, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jun 27, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor precursor ink composition includes an ink composition for forming a chalcogenide semiconductor film and a peroxide compound mixed with the ink composition. A method for forming a chalcogenide semiconductor film and a method for forming a photovoltaic device each include using the compound semiconductor precursor ink composition containing peroxide compound to form a chalcogenide semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.