Optical mask for forming pattern
US8895214B2 · kind B2 · utility
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2References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 13, 2014 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Feb 13, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 μm, and a transmission ratio of the halftone layer may range from about 10% to about 50%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.