Process for production of photoresist pattern
US8895235B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2011 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jun 11, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70408
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.