Method to improve nucleation of materials on graphene and carbon nanotubes
US8895352B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2009 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Sep 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thickness of from about two angstroms to about 10 angstroms on at least a portion of the surface of the carbon-based material to facilitate nucleation of the coating on the surface of the carbon-based material. The thin coating is deposited to a thickness of from about two angstroms to about 100 angstroms over the ultra thin silicon layer to form the thin coating on the surface of the carbon-based material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.