Monolithic integration of photonics and electronics in CMOS processes

US8895413B2 · kind B2 · utility

Assignee

• Luxtera, Inc. · US

Inventors

• Thierry Pinguet · Cardiff-by-the-Sea, US
• Steffen Gloeckner · San Diego, US
• Peter De Dobbelaere · San Diego, US
• Sherif Abdalla · Carlsbad, US
• Daniel Kucharski · Carlsbad, US
• Gianlorenzo Masini · Carlsbad, US
• Kosei Yokoyama · San Diego, US
• John Andrew Guckenberger · San Diego, US
• Attila Mekis · Carlsbad, US

Key dates

• Filing date: Feb 2, 2012
• Grant date: Nov 25, 2014
• Expiry date: Feb 2, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/00
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices bonded to at least a portion of each of the wafers together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions.