Method of forming channel layer of electric device and method of manufacturing electric device using the same
US8895425B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N99/05
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The conductive substrate and a metal to be plated are used as respective electrodes to carry out electroplating within an electrolyte solution. In this case, electrons provided by a tunneling current passing through the insulating layer from the conductive substrate are bonded with ions of the metal within the electrolyte solution to form a metal channel layer on the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.