Method for fabricating semiconductor device
US8895431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes: forming an interlayer insulating film on a substrate; forming a first hard mask formation film on the interlayer insulating film; altering the first hard mask formation film; after the altering of the first hard mask formation film, transferring an interconnect groove pattern to the altered first hard mask formation film to form a first hard mask made of the altered first hard mask formation film; and etching the interlayer insulating film using the first hard mask to form an interconnect groove in the interlayer insulating film. The first hard mask formation film is made of a metal film or a metallic compound film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.