Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
US8895838B1 · kind B1 · utility
7Cited by
5References
11Claims
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Key dates
| Filing date | Mar 8, 2010 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Aug 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Material and antireflection structure designs and methods of manufacturing are provided that produce efficient photovoltaic power conversion from single- and multijunction devices. Materials of different energy gap are combined in the depletion region of at least one of the semiconductor junctions. Higher energy gap layers are positioned to reduce the diode dark current and enhance the operating voltage by suppressing both carrier injections across the junction and recombination rates within the junction. Step-graded antireflection structures are placed above the active region of the device in order to increase the photocurrent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.