Patent · US Active

Indium-less transparent metalized layers

US8895874B1 · kind B1 · utility

2Cited by
52References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 10, 2010
Grant dateNov 25, 2014
Priority date
Expiry dateFeb 6, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Thin indium-less “optically porous” layers adapted to replace traditional ITO layers are provided herein. A thin metalized film adapted to carry an electrical charge can include a dense pattern of small openings to allow the transmission of light to or from an underlying semiconductor material. The pattern of openings can create a regular or irregular grid pattern of low aspect ratio fine-line metal conductors. Creation of this optically porous metalized film can include the printing of a catalytic precursor material, such as palladium in solution in a pattern on a substrate, drying or curing the catalytic precursor, and the deposition of a thin layer of metal, such as copper on the dried precursor to form the final conductive and optically porous film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.