Microstructure manufacturing method
US8895934B2 · kind B2 · utility
4Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2011 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Sep 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.