Nonvolatile storage device
US8895952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Sep 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
Abstract
A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.