Semiconductor device

US8895978B2 · kind B2 · utility

Assignee

• Advanced Interconnect Materials, LLC · JP

Inventors

• Junichi Koike · Sendai, JP
• Pilsang Yun · Yongin-si, KR
• Hideaki Kawakami · Chiba, JP

Key dates

• Filing date: Jun 30, 2011
• Grant date: Nov 25, 2014
• Expiry date: Jun 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/832

Abstract

An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced.A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.