Semiconductor device and method for producing same
US8896058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2011 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Oct 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layer 15 having an opening 28 and the GaN-based stacked layer 15 includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. The vertical semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, and a gate electrode G located on the regrown layer. The gate electrode G covers a portion having a length corresponding to the thickness of the p-type GaN-based barrier layer and is terminated at a position on the wall surface, the position being away from the bottom portion of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.