Patent · US Active

Reducing defects in electronic switching devices

US8896071B2 · kind B2 · utility

2Cited by
6References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 12, 2008
Grant dateNov 25, 2014
Priority date
Expiry dateNov 15, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K85/111
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A technique for isolating electrodes on different layers of a multilayer electronic device across an array containing more than 100000 devices on a plastic substrate. The technique comprises depositing a bilayer of a first dielectric layer (6) of a solution-processible polymer dielectric and a layer of parylene (9) to isolate layers of conductor or semiconductor on different levels of the device. The density of defects located in the active area of one of the multilayer electronic devices is typically more than 1 in 100000.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.