Patent · US Active

Integrated circuit and manufacturing method

US8896073B2 · kind B2 · utility

6Cited by

14References

12Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Youri Victorovitch Ponomarev · Leuven, BE
David Tio Castro · Heverlee, BE
Roel Daamen · Herkenbosch, NL

Key dates

Filing date	Jan 21, 2013
Grant date	Nov 25, 2014
Priority date	—
Expiry date	Jan 21, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.