Semiconductor radiation detector with thin film platinum alloyed electrode
US8896075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2009 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | May 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/195
Abstract
A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.