III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
US8896100B2 · kind B2 · utility
5Cited by
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29Claims
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Key dates
| Filing date | Aug 27, 2008 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Dec 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02603
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.