Patent · US Active

Semiconductor device and method for manufacturing the same

US8896111B2 · kind B2 · utility

20Cited by
0References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 12, 2013
Grant dateNov 25, 2014
Priority date
Expiry dateMar 12, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one embodiment, a semiconductor device includes a first semiconductor chip disposed on a circuit board, an adhesive layer fixing the first semiconductor chip to the circuit board, and a second semiconductor chip having an outer shape smaller than that of the first semiconductor chip. At least a part of the second semiconductor chip is embedded in the adhesive layer. The adhesive layer has a thickness in a range of 95 to 150 μm. The adhesive layer includes a cured product of a thermosetting resin whose thermal time viscosity at a time that the second semiconductor chip is embedded is in a range of 500 to 5000 Pa·s.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.