Patent · US Active

Reliability in semiconductor device control

US8896364B2 · kind B2 · utility

2Cited by
6References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 27, 2011
Grant dateNov 25, 2014
Priority date
Expiry dateJun 27, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH02H7/268
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A gate control device for a semiconductor device includes at least one power supply module, at least one optical communication interface for receiving optical signals from two valve control units and converting them to electric signals for supply to a corresponding power supply module, where in normal operations mode one valve control unit is an active valve control unit and the other is a standby valve control unit, where the optical signal of an active unit energizes the gate control device and provides semiconductor device controlling data, a semiconductor device control module and a reliability control module that performs selection of active valve control unit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.