Plasmonic reflective display fabricated using anodized aluminum oxide
US8896907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Oct 4, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for forming a reflective plasmonic display. The method provides a substrate and deposits a bottom dielectric layer. A conductive film is deposited overlying the bottom dielectric layer. A hard mask is formed with nano-size openings overlying the conductive film. The conductive film is plasma etched via nano-size openings in the hard mask, stopping at the dielectric layer. After removing the hard mask, a conductive film is left with nano-size openings to the dielectric layer. Metal is deposited in the nano-size openings, creating a pattern of metallic nanoparticles overlying the dielectric layer. Then, the conductive film is removed. The hard mask may be formed by conformally depositing an Al film overlying the conductive film and anodizing the Al film, creating a hard mask of porous anodized Al oxide (AAO) film. The porous AAO film may form a short-range hexagonal, and long-range random order hole patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.