MTJ cell for an MRAM device and a manufacturing method thereof
US8897061B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jan 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MTJ cell includes a first metal layer elongated in the X-direction; a second metal layer separated from the first metal layer and elongated in the Y-direction; a magnetic tunnel junction (MTJ) interposed between the overlapping parts of the first and second metal layers and having extended parts not covered by the second metal layer, the MTJ including a pinned layer, a barrier layer, and a storage layer sequentially laminated; and a yoke spanning across the second metal layer, with both ends in the X-direction contacting the top surface of the extended parts of the storage layer not covered by the second metal layer, either directly or through an insulator. The planar shapes of the MTJ and the yoke possess a quantum easy axis in the X-direction and Y-direction, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.