Patent · US Active

Semiconductor laser apparatus and method for manufacturing same

US8897328B2 · kind B2 · utility

1Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 1, 2014
Grant dateNov 25, 2014
Priority date
Expiry dateApr 1, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/2231
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The semiconductor laser device of the present invention has a conductive first heatsink member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is disposed on the first heatsink member, and the semiconductor laser element is disposed on the first adhesive. The first adhesive reaches an upper part of the side surface of the first heatsink member under the laser emission surface for laser emission of the semiconductor laser element. The structure further improves heat dissipation of the semiconductor laser element; at the same time, it is effective in obtaining laser light from the semiconductor laser element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.