Static IR (voltage) drop analyzing apparatus and associated method
US8898050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Aug 27, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A static voltage drop analyzing apparatus applied to a Multi-Threshold Complementary Metal-Oxide-Semiconductor (MTCMOS) transistor is provided. The static voltage drop analyzing apparatus includes a calculating module, a processing module, and a measuring module. The calculating module calculates a voltage drop tolerance according to the voltage drop characteristic of the MTCMOS transistor. The processing module selects a simulation metal layer corresponding to the voltage drop tolerance from a plurality of candidate simulation metal layers, and adds the simulation metal layer into the MTCMOS transistor. The measuring module measures the voltage drop of the simulation metal layer added into the MTCMOS transistor. The measured voltage drop of the simulation layer added into the MTCMOS is substantially the static voltage drop of the MTCMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.