Patent · US Active

Redriven/retimed registered dual inline memory module

US8898368B2 · kind B2 · utility

4Cited by
6References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 7, 2008
Grant dateNov 25, 2014
Priority date
Expiry dateFeb 6, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F13/4072
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory module may include a plurality of dynamic random access memory (DRAM) chips, each of which may have one or more data input/output (D/Q) terminals. The memory module may include data redriving/retiming circuits connected to the D/Q terminals of the plurality of DRAM chips. The data redriving/retiming circuits may provide isolation between a system memory bus and the D/Q terminals of the DRAM chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.