Semiconductor gas sensor and method for measuring a residual gas proportion with a semiconductor gas sensor

US8899098B2 · kind B2 · utility

Assignee

• Micronas GmbH · DE

Inventors

• Christoph Senft · Munich, DE
• Stefan Simon · Cologne, DE
• Walter Hansch · Haag in Oberbayern, DE

Key dates

• Filing date: Nov 21, 2012
• Grant date: Dec 2, 2014
• Expiry date: Aug 6, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N33/004
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.