Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
US8900467B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2013 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0002
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
A method for making a chemical contrast pattern uses directed self-assembly of block copolymers (BCPs) and sequential infiltration synthesis (SIS) of an inorganic material. For an example with poly(styrene-block-methyl methacrylate) (PS-b-PMMA) as the BCP and alumina as the inorganic material, the PS and PMMA self-assemble on a suitable substrate. The PMMA is removed and the PS is oxidized. A surface modification polymer (SMP) is deposited on the oxidized PS and the exposed substrate and the SMP not bound to the substrate is removed. The structure is placed in an atomic layer deposition chamber. Alumina precursors reactive with the oxidized PS are introduced and infuse by SIS into the oxidized PS, thereby forming on the substrate a chemical contrast pattern of SMP and alumina. The resulting chemical contrast pattern can be used for lithographic masks, for example to etch the underlying substrate to make an imprint template.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.