Nitride semiconductor laser element
US8900901B2 · kind B2 · utility
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3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2010 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Mar 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.