Patent · US Active

Atomic layer deposition strengthening members and method of manufacture

US8900906B2 · kind B2 · utility

3Cited by

15References

19Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Gary Yama · Mountain View, US
Fabian Purkl · Gerlingen, DE
Matthieu Liger · Pasadena, US
Matthias Illing · Tübingen, DE

Key dates

Filing date	Mar 8, 2012
Grant date	Dec 2, 2014
Priority date	—
Expiry date	Dec 7, 2032

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0181
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.