Method for manufacturing a diode, and a diode

US8900925B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Richard Spitz · Reutlingen, DE
• Alfred Goerlach · Tübingen, DE
• Robert Kolb · Groß-Umstadt, DE

Key dates

• Filing date: Jun 19, 2013
• Grant date: Dec 2, 2014
• Expiry date: Jun 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/53

Abstract

In a method for manufacturing a diode, a semiconductor crystal wafer is used to produce a p-n or n-p junction, which extends in planar fashion across the top side of a semiconductor crystal wafer. Separation edges form perpendicularly to the top side of the semiconductor crystal wafer, which edges extend across the p-n or n-p junction. The separation of the semiconductor crystal wafer is achieved in that, starting from a disturbance, a fissure is propagated by local heating and local cooling of the semiconductor crystal wafer. The separation fissure thus formed extends along crystal planes of the semiconductor crystal, which avoids the formation of defects in the area of the p-n or n-p junction.