Thin film transistor device with accurately aligned electrode patterns

US8900955B2 · kind B2 · utility

Assignees

• Cambridge Enterprise Limited · GB
• PLASTIC LOGIC LIMITED · GB

Inventors

• Paul Cain · Cambridge, GB
• Yong-Young Noh · Daejeon, KR
• Henning Sirringhaus · Cambridge, GB

Key dates

• Filing date: Sep 15, 2012
• Grant date: Dec 2, 2014
• Expiry date: Sep 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/464

Abstract

An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.