Method for manufacturing semiconductor device
US8900962B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Feb 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a base region and an emitter region in a front surface of a semiconductor layer. The method can include forming a first impurity implantation region by implanting first impurity of a first conductivity type into a back surface of the semiconductor layer. The method can include selectively forming a second impurity implantation region by selectively implanting second impurity of a second conductivity type into the first impurity implantation region. In addition, the method can include irradiating the first impurity implantation region and the second impurity implantation region with laser light. A peak of impurity concentration profile in a depth direction of at least one of the first impurity implantation region and the second impurity implantation region before irradiation with the laser light is adjusted to a depth of 0.05 μm or more and 0.3 μm or less from the back surface of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.