Method to realize flux free indium bumping
US8900986B2 · kind B2 · utility
2Cited by
2References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 21, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Oct 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method to realize flux free indium bumping process includes several steps including substrate metallization, contact holes opening, underbump metallization (UBM) layer thickening, indium bump preparation and Ag layer coating. The method can be used in the occasion for some special application, e.g., the packaging of the photoelectric chip (with optical lens), MEMS and biological detection chip, where the usage of flux is prohibited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.