Patent · US Active

Aqueous acidic solution and etching solution and method for texturizing the surface of single crystal and polycrystal silicon substrates

US8901000B2 · kind B2 · utility

2Cited by
9References
31Claims
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Key dates

Filing dateAug 25, 2011
Grant dateDec 2, 2014
Priority date
Expiry dateAug 25, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24355
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.