Thin film transistor comprising pixel electrode
US8901565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2013 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Sep 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A semiconductor device adapted for being disposed on a substrate is provided. The semiconductor device includes a pixel electrode, a drain, a semiconductor channel layer, a source, a gate insulation layer and a side-gate. The pixel electrode is disposed on the substrate. The drain is disposed on the pixel electrode and exposes a portion of pixel electrode. The semiconductor channel layer is disposed on the drain. The source is disposed on the semiconductor channel layer. The gate insulation layer is disposed on the substrate, at least covers the source and surrounds the semiconductor channel layer. The side-gate is disposed on the gate insulation layer and extendedly covers the substrate along at least one side of the gate insulation layer. An extending direction of a portion of the side-gate is identical to a stacking direction of the drain, the semiconductor channel layer and the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.