Vertical power component
US8901601B2 · kind B2 · utility
3Cited by
4References
21Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 22, 2013 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Feb 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.