Semiconductor devices with guard rings
US8901604B2 · kind B2 · utility
32Cited by
108References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Feb 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices with guard rings are described. The semiconductor devices may be, e.g., transistors and diodes designed for high-voltage applications. A guard ring is a floating electrode formed of electrically conducting material above a semiconductor material layer. A portion of an insulating layer is between at least a portion of the guard ring and the semiconductor material layer. A guard ring may be located, for example, on a transistor between a gate and a drain electrode. A semiconductor device may have one or more guard rings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.