Patent · US Active

Location-related adjustment of the operating temperature distribution or power distribution of a semiconductor power component, and component for carrying out said method

US8901614B2 · kind B2 · utility

0Cited by

3References

7Claims

0Family size

Assignee

X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

Michael Stoisiek · Ottobrunn, DE
Michael Gross · Betzdorf, DE

Key dates

Filing date	May 19, 2009
Grant date	Dec 2, 2014
Priority date	—
Expiry date	Nov 20, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2017/0806
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Described is a method for adjusting an operating temperature of MOS power components composed of a plurality of identical individual cells and a component for carrying out the method. As a characteristic feature, the gate electrode network (4) of the active chip region is subdivided into several gate electrode network sectors (B1, B2, B3) which are electrically isolated from one another by means of isolating points and to each of which a different gate voltage is fed via corresponding contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.