Power semiconductor device
US8901651B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 7, 2013 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Nov 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/144
Abstract
A power semiconductor device is provided, which can prevent an electric field from concentrating on a diode region, and can improve a breakdown voltage by creating an impurity concentration gradient in the diode region to increase from a termination region to an active cell region to cause reverse current to be distributed to the active cell region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.