Semiconductor structure for photon detection

US8901690B2 · kind B2 · utility

Assignee

• ESPROS Photonics AG · CH

Inventors

• Martin Popp · Dresden, DE
• Beat De Coi · Sargans, CH
• Marco Annese · Chur, CH

Key dates

• Filing date: Jul 18, 2012
• Grant date: Dec 2, 2014
• Expiry date: Jul 18, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring, which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer.