Memory system having nonvolatile semiconductor memories with control operation having high-current and low-current periods
US8902662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Jan 3, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a memory system includes a first nonvolatile semiconductor memory, a second nonvolatile semiconductor memory and a controller. The first memory has memory cells and executes a first operation that is at least one of write, read, and erase operations with respect to the memory cells. The first operation includes a first sub-operation and a second-sub operation that consume a current which is equal to or higher than a predetermined current. The second memory has memory cells and executes a second operation that is at least one of write, read, and erase operations with respect to the memory cells. The second operation includes a third sub-operation and a fourth sub-operation that consume a current which is equal to or higher than the predetermined current. The controller controls the first operation and the second operation of the first memory and the second memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.