Semiconductor light emitting device and method for manufacturing the same
US8906721B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 21, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | May 21, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.