Method of manufacturing a dynamic random access memory (DRAM) including forming contact pads of adjacent cells by laterally etching a contact opening of a cell therebetween
US8906763B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2012 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A DRAM device includes a substrate including an active region having an island shape and a buried gate pattern. A mask pattern is over an upper surface portion of the substrate between portions of the buried gate pattern. A capping insulating layer fills a gap between portions of the mask pattern. A first pad contact penetrates the capping insulating layer and the mask pattern, and contacts a first portion of the substrate in the active region. Second pad contacts are under the capping insulating layer, and contact a second portion of the substrate in the active region positioned at both sides of the first pad contact. A spacer is between the first and second pad contacts to insulate the first and second pad contacts. A bit line configured to electrically connect with the first pad contact, and a capacitor configured to electrically connect with the second pad contacts, are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.