Method and device for producing a compound semiconductor layer
US8907253B2 · kind B2 · utility
1Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2010 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a I-III-VI compound semiconductor layer, a substrate is provided with a coating which has a metallic precursor layer. The coating is kept, for the duration of a process time, at temperatures of at least 350 degrees C. and the metallic precursor layer, in the presence of a chalcogen at an ambient pressure of between 500 mbar and 1500 mbar, is converted into a compound semiconductor layer. The coating is kept at temperatures for the duration of an activation time which attain at least an activation barrier temperature, whereby as the activation barrier temperature a value of at least 600° C. is selected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.