Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite

US8907333B2 · kind B2 · utility

Assignees

• EVONIK DEGUSSA GMBH · DE
• Forschungszentrum Karlsruhe GmbH · DE

Inventors

• Frank-Martin Petrat · Munster, DE
• Heiko Thiem · Bensheim, DE
• Sven Hill · Aschaffenburg, DE
• Andre Ebbers · Bochum, DE
• Koshi Okamura · Karlsruhe, DE
• Roland Schmechel · Darmstadt, DE

Key dates

• Filing date: Mar 10, 2008
• Grant date: Dec 9, 2014
• Expiry date: Jun 15, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6755
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.