Stable amorphous metal oxide semiconductor
US8907336B2 · kind B2 · utility
17Cited by
0References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 4, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Feb 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K50/11
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.